SSF10N60 ? silikron semiconductor co.,ltd. 20 12 . 05 . 1 4 version : 1. 0 page 1 of 8 www.silikron.com main product characteristics: features and benefits : description : absolute max rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 10 a i d @ tc = 100c continuous drain current, v gs @ 10v 6 i dm pulsed drain current 40 p d @tc = 25c power dissipation 156 w linear derating factor 1.2 5 w/c v ds drain - source voltage 600 v v gs gate - to - source voltage 30 v e as single pulse avalanche energy @ l= 14.2 mh 6 41 mj i a s avalanche current @ l= 14.2 mh 9.5 a t j t stg operating junction and storage temperature range - 55 to + 150 c v dss 600v r ds (on) 0. 69 (typ . ) i d 10 a to - 220 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, l oad switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? 150 operating temperature it utilizes the latest processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications .
ssf 10n60 ? silikron s emiconductor co.,ltd . 20 12 . 05 . 1 4 version : 1. 0 page 2 of 8 www.silikron.com th ermal resistance symbol characterizes typ. max. units r jc junction - to - case 0.8 /w r j a junction - to - ambient ( t 10s ) 62 /w junction - to - ambient (pcb mounted, steady - state) 40 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. ty p. max . units conditions v ( b r) dss drain - to - source breakdown voltage 600 v v gs = 0v, id = 250a r ds(on) static drain - to - source on - resistance 0. 69 0.8 v gs =10v , i d = 5 a 1. 60 t j = 1 25 v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250a 1.8 t j = 1 25 i dss drain - to - source leakage current 1 a v ds = 600 v,v gs = 0v 50 t j = 125 i gss gate - to - source forward leakage 1 00 na v gs = 30 v - 1 00 v gs = - 30 v q g total gate charge 25.09 nc i d = 9.5 a , v ds = 480 v , v gs = 10v q gs gate - to - source charge 7.74 q gd gate - to - drain("miller") charge 8.87 t d(on) turn - on delay time 20. 2 ns v gs =10v, vds= 3 2 0 v, r l = 33 .8 , r gen = 25 id= 9.5 a t r rise time 3 7.2 t d(off) turn - off delay time 65.2 t f fall time 40 .2 c iss input capacitance 1 25 7 pf v gs = 0v v ds = 25 v ? = 1m hz c oss output capacitance 1 59 c rss reverse transfer capacitance 1.36 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 10 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 40 a v sd diode forward voltage 0.9 2 1 . 4 v i s = 10 a, v gs =0v t rr re verse recovery time 745 ns t j = 25c , i f = 9.5 a, di/dt = 10 0a/s q rr reverse recovery charge 4841 nc
ssf 10n60 ? silikron s emiconductor co.,ltd . 20 12 . 05 . 1 4 version : 1. 0 page 3 of 8 www.silikron.com test circuits and waveforms switch waveforms: n otes : the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the valu e of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction - to - case thermal impedence which is measured with the device mounted to a lar ge heatsink, assuming a maximum junction temperature of t j(max) = 150 c.
ssf 10n60 ? silikron s emiconductor co.,ltd . 20 12 . 05 . 1 4 version : 1. 0 page 4 of 8 www.silikron.com t ypical electrical and thermal characteristics fig ure 2. g ate to sour ce cut - off voltage figure 1: typical output characteristics fig ure 3. drain - to - source breakdown voltage v s. case temperature figure 4: normalized on - resistance vs. case temperature
ssf 10n60 ? silikron s emiconductor co.,ltd . 20 12 . 05 . 1 4 version : 1. 0 page 5 of 8 www.silikron.com fig ure 5 . maximum drain current vs. case temperature case temperature t ypical electrical and thermal characteristics fig ure 6 . typical capacitance vs. drain - to - source voltage fig ure 7 . maximum effective transient thermal impedance, junction - to - case
ssf 10n60 ? silikron s emiconductor co.,ltd . 20 12 . 05 . 1 4 version : 1. 0 page 6 of 8 www.silikron.com mechanical data min nom max min nom max a 4.400 4.550 4.700 0.173 0.179 0.185 a1 1.270 1.300 1.330 0.050 0.051 0.052 a2 2.240 2.340 2.440 0.088 0.092 0.096 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 b2 0.750 0.800 0.850 0.030 0.031 0.033 c 0.480 0.500 0.520 0.019 0.020 0.021 d 15.100 15.400 15.700 0.594 0.606 0.618 d1 8.800 8.900 9.000 0.346 0.350 0.354 d2 2.730 2.800 2.870 0.107 0.110 0.113 e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 8.700 - - 0.343 - p 3.570 3.600 3.630 0.141 0.142 0.143 p1 1.400 1.500 1.600 0.055 0.059 0.063 e e1 l 13.150 13.360 13.570 0.518 0.526 0.534 l1 l2 2.900 3.000 3.100 0.114 0.118 0.122 l3 1.650 1.750 1.850 0.065 0.069 0.073 l4 0.900 1.000 1.100 0.035 0.039 0.043 q1 5 0 7 0 9 0 5 0 7 0 9 0 q2 5 0 7 0 9 0 5 0 7 0 9 0 q3 5 0 7 0 9 0 5 0 7 0 9 0 q4 1 0 3 0 5 0 1 0 3 0 5 0 0.2bsc 7.35ref 0.29ref symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc 5.08bsc to220 package outline dimension_gn
ssf 10n60 ? silikron s emiconductor co.,ltd . 20 12 . 05 . 1 4 version : 1. 0 page 7 of 8 www.silikron.com ordering and marking information device marking: ssf 10 n60 package (available) to 220 operating temperature range c : - 55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton bo x to 220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 1 5 0 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 10n60 ? silikron s emiconductor co.,ltd . 20 12 . 05 . 1 4 version : 1. 0 page 8 of 8 www.silikron.com attention: any and all silikron products d escribed or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events t hat could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or tran smitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (incl uding circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringem ents of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delive ry specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@ silik ron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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